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| FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM January 2005 FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM Features 21 A, 30 V Max RDS(ON) = 3.6 m @ VGS = 10 V Max RDS(ON) = 4.5 m @ VGS = 4.5 V Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested General Description The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Applications Synchronous Rectifier for DC/DC Converters - Notebook Vcore low side switch Point of Load low side switch D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RJA RJC Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 20 21 105 2.5 1.2 1 -55 to +125 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 Package Marking and Ordering Information Device Marking FDS6699S Device FDS6699S Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6699S Rev. D FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1 1.4 -3.2 3.0 3.6 4.6 100 3.6 4.5 5.6 30 28 500 100 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance 3 V mV/C m gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd VSD trr IRM Qrr Notes: S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 0.4 3610 1050 340 1.8 3.1 pF pF pF ns ns ns ns nC nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at Vgs = 10V Total Gate Charge at Vgs = 5V Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 21 A, 11 12 73 38 65 35 9 11 20 22 117 61 91 49 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A IF = 21 A, diF/dt = 300 A/s (Note 2) (Note 3) 0.36 32 2.2 35 0.7 V ns A nC 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when mounted on a 1 in2 pad of 2 oz copper b) 105/W when mounted on a .04 in2 pad of 2 oz copper c) 125/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. 2 FDS6699S Rev. D www.fairchildsemi.com FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics 105 V GS = 10V 87.5 3.0V 2.6 2.4 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.0V 4.5V 6.0V 10V I D, DRAIN CURRENT (A) 4.5V 70 3.5V 52.5 35 2.5V 17.5 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0 17.5 35 52.5 70 87.5 105 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 1.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) I D = 21A VGS =10V I D = 10.5A 0.01 1.4 1.2 0.008 1 0.006 TA = 125C 0.8 0.004 TA = 25C 0.002 0.6 -50 -25 0 25 50 75 100 125 T J, JUNCTION TEMPERATURE (C) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 105 VDS = 5V 1000 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VGS = 0V I S, REVERSE DRAIN CURRENT (A) 87.5 100 I D, DRAIN CURRENT (A) 70 10 TA = 125C 52.5 TA = 125C 35 -55C 1 25C 0.1 -55C 0.01 17.5 25C 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.001 0 0.2 0.4 0.6 0.8 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDS6699S Rev. D www.fairchildsemi.com FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) 10 ID = 21A 5000 f = 1MHz VGS = 0 V 4000 VGS, GATE-SOURCE VOLTAGE (V) 8 V DS = 10V CAPACITANCE (pF) 20V 6 15V 4 3000 Ciss 2000 Coss 1000 2 Crss 0 0 10 20 30 40 50 60 70 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT ID , DRAIN CURRENT (A) 100 100us 1ms 10ms 100ms 1s 40 SINGLE PULSE RJA = 125C/W TA = 25C 10 10s 30 1 VGS = 10V SINGLE PULSE RJA = 125 C/W TA = 25C DC 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 R JA(t) = r(t) * RJA RJA = 125 C/W 0.1 0.1 0.05 0.02 P(pk) 0.01 t1 t2 T J - T A = P * RJA (t) Duty Cycle, D = t 1 /t 2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDS6699S Rev. D www.fairchildsemi.com FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6699S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 I DSS, REVERSE LEAKAGE CURRENT (A) T A = 125 oC 0.01 CURRENT : 0.8A/div T A = 100 oC 0.001 0.0001 TA = 25 oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 TIME : 12.5ns/div Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6699S SyncFET body diode reverse recovery characteristic. 5 FDS6699S Rev. D www.fairchildsemi.com FDS6699S 30V N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FDS6699S Rev. D www.fairchildsemi.com |
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